ISO9001.pdf
Application:
IPD35N10S3L-26 is an N-channel MOSFET transistor mainly used in fields such as switching power supplies, three-phase motor drives, and electric tools.
Conclusion:
IPD35N10S3L-26 has the characteristics of low conduction resistance, high switching speed, and strong anti-static ability. It can operate normally under high temperature and voltage conditions, and has good reliability and stability.
Parameters:
Conduction resistance: 35m Ω (maximum)
Leakage current: 25 μ A (maximum value)
Gate source voltage: ± 20V
Rated current: 35A
Working temperature: -55 ℃ to 150 ℃
Packaging:
IPD35N10S3L-26 is packaged in TO-252 (DPAK), with dimensions of 6.6mm x 9.45mm x 2.2mm.
Product Technical Specifications | | | | EU RoHS | Compliant with Exemption聽 | ECCN (US) | EAR99 | Part Status | Unconfirmed | HTS | 8541.29.00.95 | SVHC | Yes | SVHC Exceeds Threshold | Yes | Automotive | Yes | PPAP | Unknown | Product Category | Power MOSFET | Configuration | Single | Process Technology | OptiMOS | Channel Mode | Enhancement | Channel Type | N | Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 100 | Maximum Gate Source Voltage (V) | 卤20 | Maximum Continuous Drain Current (A) | 35 | Maximum Drain Source Resistance (mOhm) | 24@10V | Typical Gate Charge @ Vgs (nC) | 30@10V | Typical Gate Charge @ 10V (nC) | 30 | Typical Input Capacitance @ Vds (pF) | 2070@25V | Maximum Power Dissipation (mW) | 71000 | Typical Fall Time (ns) | 3 | Typical Rise Time (ns) | 4 | Typical Turn-Off Delay Time (ns) | 18 | Typical Turn-On Delay Time (ns) | 6 | Minimum Operating Temperature (掳C) | -55 | Maximum Operating Temperature (掳C) | 175 | Supplier Temperature Grade | Automotive | Packaging | Tape and Reel | Mounting | Surface Mount | Package Height | 2.26(Max) | Package Width | 6.22(Max) | Package Length | 6.73(Max) | PCB changed | 2 | Tab | Tab | Standard Package Name | TO-252 | Supplier Package | DPAK | Pin Count | 3 | Lead Shape | Gull-wing | | | | | |