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Application:
IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and high switching speed, making it very suitable for use in low voltage applications.
Conclusion:
IPD80R1K4P7 has the following characteristics:
Very low switching and conduction losses;
High voltage limit, capable of operating at high voltage;
High switching speed enables efficient DC-DC converters;
High temperature stability, capable of working in high temperature environments.
Parameters:
The key parameters of IPD80R1K4P7 are as follows:
Rated current: 80A;
Rated voltage: 40V;
Maximum drain power supply voltage: 55V;
Static resistance: 1.4m Ω;
Typical capacitance: 2000pF;
Working temperature range: -55 ° C~+175 ° C;
Packaging type: TO-252 (DPAK).
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